Measurement and modelling of power SiC MOSFET transistorsMolnar, Darjan (Avtor) Kramberger, Iztok (Mentor) Krischan, Klaus (Komentor) Fuchs, Michael (Komentor) SiCMOSFETtransistorsimulationPCBThe increasing demand for smaller, faster, and more efficient switch mode power supplies (SMPS) and energy converters has led to the development of new power MOSFET technologies, such as SiC (silicon carbide) power MOSFET transistors. Switching parameters, output voltages and currents and power consumption need to be measured accurately to assess different types of power electronics components more efficiently in today’s rapid implementation of new energy transfer and modulation technology. The need for improving switching circuits in power electronics and trying to use simple simulation circuits for designing PCBs to measure output values of said power electronics transistors is the basis of this thesis. Even though manufacturers of power electronics transistors provide data on drain-source voltages and currents, these are mostly measured for specific conditions regarding pulse duration, gate-source voltage, case temperature of the transistor etc., and as such do not provide information as to where the limits of the drain source voltages and currents for different measurement parameter values are. The goal of the thesis is to find a way to measure the limits of drain-source voltages and currents of power electronics transistors (in this case a SiC MOSFET transistor), and to see if a simple SPICE-model could be built for other power electronic transistors as well, based on the results of this thesis.[D. Molnar]20212021-05-09 20:36:46Magistrsko delo/naloga79121sl