Field induced memory effects in random nematicsRanjkesh Siahkal, Amid (Avtor) Ambrožič, Milan (Avtor) Kralj, Samo (Avtor) Sluckin, T. J. (Avtor) liquid crystaltopological defectsrandom disorderWe studied numerically external field induced memory effects in randomly perturbed nematic liquid crystals. Random anisotropy nematic-type lattice model was used. The impurities imposing orientational disorder were randomly spatially distributed with the concentration p below the percolation threshold. Simulations were carried for finite temperatures, where we varied p, interaction strength between LC molecules, and impurities and external field B. In the {B, T} plane we determined lines separating short range—quasi long range and quasi long range—long range order. Furthermore, crossover regime separating external field and random field dominated regime was estimated. We calculated remanent nematic ordering in samples at B = 0 as a function of the previously experienced external field strength B.Wiley 20142017-06-14 09:07:25Znanstveno delo66176ISSN: 1687-8108UDK: 532.783OceCobissID: 23812647COBISS_ID: 21004552DOI: 10.1155/2014/423693ISSN pri članku: 1687-8108NUK URN: URN:SI:UM:DK:GNY9AB8Osl