20.500.12556/DKUM-66176 Field induced memory effects in random nematics We studied numerically external field induced memory effects in randomly perturbed nematic liquid crystals. Random anisotropy nematic-type lattice model was used. The impurities imposing orientational disorder were randomly spatially distributed with the concentration p below the percolation threshold. Simulations were carried for finite temperatures, where we varied p, interaction strength between LC molecules, and impurities and external field B. In the {B, T} plane we determined lines separating short range—quasi long range and quasi long range—long range order. Furthermore, crossover regime separating external field and random field dominated regime was estimated. We calculated remanent nematic ordering in samples at B = 0 as a function of the previously experienced external field strength B. liquid crystal topological defects random disorder tekoči kristali topološki defekti naključni nered true true true Wiley Angleški jezik Slovenski jezik Znanstveno delo 2017-06-14 09:07:25 2017-06-14 09:09:01 2025-12-09 10:38:26 2019-07-11 14:58:18 2014 0 0 str. 1-10 Letn. 2014 2014 0000-00-00 Zaloznikova Objavljeno NiDoloceno 2014-08-04 2014-10-15 2014-11-30 1687-8108 532.783 23812647 21004552 10.1155/2014/423693 1687-8108 URN:SI:UM:DK:GNY9AB8O Advances_in_Condensed_Matter_Physics_2014_Ranjkesh_et_al._Field_Induced_Memory_Effects_in_Random_Nematics.pdf Advances_in_Condensed_Matter_Physics_2014_Ranjkesh_et_al._Field_Induced_Memory_Effects_in_Random_Nematics.pdf 1 9D5D284232DEC297E806DE92C04A58D0 30f749da72ae2ac91846c0d859fd8dae4a7a2c79a38110cfb2e77daa9c1ec629 3cfab749-7c0e-11eb-bb7a-00155d0001ca https://dk.um.si/Dokument.php?lang=slv&id=112477 http://www.hindawi.com/journals/acmp/2014/423693/ 1 https://dk.um.si/Dokument.php?lang=slv&id=112476 Fakulteta za naravoslovje in matematiko 0 0 0