20.500.12556/DKUM-91763 Mixed-field radiation of 3-D MLC flash memories for space applications This article presents the results of dynamic measurements of 3-D multilevel cell (MLC) NAND flash memories in a mixed-field radiation facility CERN High-energy AcceleRator Mixed field/facility (CHARM), CERN. The results show that the behavior of devices is comparable to tests with specific high energy particles, such as high energy protons, heavy ions, and to TID tests. The observed TID and single-event effects (SEEs) in flash memories from the existing relevant work are also observed in mixed field, making the environment suitable for an accelerated system level test. As the CHARM hadron energy spectrum is comparable to the low Earth orbit (LEO) environment, the facility is appropriate as an accelerated test for space applications. Furthermore, the volumetric characteristics of the devices can be observed in this 3-D radiation facility. Additionally, bad bit (BB) spread was observed, and the necessary radiation induced errors in NAND devices are discussed. bit error rate flkash memories memory controller mixed field facility multilevel cell MLC radiation hardness single-event upsets SEUs space applications total ionizing dose radiacija vesolje kontrolerji aplikacije true false true Professional Technical Group on Nuclear Science Angleški jezik Slovenski jezik https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=23 © 2024 The Authors Članek v reviji 2025-02-03 14:13:39 2025-02-03 14:13:39 2026-01-15 09:58:50 0000-00-00 00:00:00 2024 0 0 str. 2400-2408 iss. 11 Vol. 71 Nov. 2024 0000-00-00 Zaloznikova Objavljeno NiDoloceno 2024-08-26 2024-10-02 2024-10-07 621.39:629.7 215735043 10.1109/TNS.2024.3474746 1558-1578 Mixed-Field_Radiation_of_3-D_MLC_Flash_Memories_for_Space_Applications.pdf Mixed-Field_Radiation_of_3-D_MLC_Flash_Memories_for_Space_Applications.pdf 1 B478FEB719F8B85AA66856D36B566BF1 3d75dc43887ed9d618e8efca66a156f3c63985059a86d5694aeb7828406d1e8f fb92ac39-e230-11ef-9425-00155d000105 https://dk.um.si/Dokument.php?lang=slv&id=188409 https://ieeexplore.ieee.org/document/10706133 0 685c0d48-f1f0-11f0-9ca2-00155d580e02 https://dk.um.si/Dokument.php?lang=slv&id=202041 Fakulteta za elektrotehniko, računalništvo in informatiko 0 0 0