20.500.12556/DKUM-95736 TID Characterization of COTS HEMT GaN Transistors an in situ study of static and dynamic parameters up to 100 krad of Co-60 gamma radiation Gallium nitride (GaN) technology has emerged as a transformative solution in the semiconductor industry due to its exceptional performance in highpower and high-frequency applications. With its inherent radiation resilience, GaN is particularly suited for environments such as space electronics and nuclear instrumentation. While static parameter testing under radiation has been extensively studied, dynamic parameter degradation—including propagation delays, rise/fall times, and efficiency losses—remains underexplored. These dynamic characteristics are useful for applications requiring precise timing, signal integrity, and rapid response, such as satellite communication and nuclear systems. This study evaluates the radiation resilience of three commercially available GaN transistors during a 100-krad (Si) Co-60 gamma irradiation campaign, with a focus on both static and dynamic parameters. Static parameters, such as threshold voltage and ON-state resistance, exhibited minimal degradation, while a larger change was observed in gate current. In contrast, dynamic parameters revealed smaller changes, including faster propagation delays and reduced efficiency, with variability observed across device types. The findings support a device-specific co-design of transistors and driver electronics for radiation-tolerant power stages Co-60 gamma drain current gallium nitride GaN gamma irradiation gate current in situ measurements propagation delay rise and fall times voltage threshold odvodni tok galijev nitrid gama iradiacija meritve in situ true false true IEEE Angleški jezik Slovenski jezik https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16 © 2025 The Authors Članek v reviji 2025-10-17 11:42:43 2025-10-17 11:42:43 2026-05-15 11:32:16 0000-00-00 00:00:00 2019 0 0 str. 6516-6525 ǂVol. ǂ72 ǂno. ǂ12 2025 0000-00-00 Zaloznikova Objavljeno NiDoloceno 2025-08-27 2025-09-26 2025-10-08 621.39 253575427 10.1109/TED.2025.3617030 1557-9646 TID_Characterization_of_COTS_HEMT_GaN_Transistors_An_In_Situ_Study_of_Static_and_Dynamic_Parameters_up_to_100_krad_of_Co-60_Gamma_Radiation.pdf TID_Characterization_of_COTS_HEMT_GaN_Transistors_An_In_Situ_Study_of_Static_and_Dynamic_Parameters_up_to_100_krad_of_Co-60_Gamma_Radiation.pdf 1 2C6C9F4AB9DA5FFC04BBA6669F308FF6 9482a6b5b39227283b83c709db64311e8ffad1d94d8e012d70932c5ac09abcdd 1c69fa94-ab3e-11f0-a0a8-00155d000105 https://dk.um.si/Dokument.php?lang=slv&id=199964 Fakulteta za elektrotehniko, računalništvo in informatiko 0 0 0