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Title:Measurement and modelling of power SiC MOSFET transistors : master's thesis
Authors:ID Molnar, Darjan (Author)
ID Kramberger, Iztok (Mentor) More about this mentor... New window
ID Krischan, Klaus (Comentor)
ID Fuchs, Michael (Comentor)
Files:.pdf MAG_Molnar_Darjan_2021.pdf (4,35 MB)
MD5: D7E9D32A2DA9F797E330B3D4525DFD88
PID: 20.500.12556/dkum/d91c0cc6-0118-4034-ac30-d2df4a48c56a
 
Language:English
Work type:Master's thesis/paper
Typology:2.09 - Master's Thesis
Organization:FERI - Faculty of Electrical Engineering and Computer Science
Abstract:The increasing demand for smaller, faster, and more efficient switch mode power supplies (SMPS) and energy converters has led to the development of new power MOSFET technologies, such as SiC (silicon carbide) power MOSFET transistors. Switching parameters, output voltages and currents and power consumption need to be measured accurately to assess different types of power electronics components more efficiently in today’s rapid implementation of new energy transfer and modulation technology. The need for improving switching circuits in power electronics and trying to use simple simulation circuits for designing PCBs to measure output values of said power electronics transistors is the basis of this thesis. Even though manufacturers of power electronics transistors provide data on drain-source voltages and currents, these are mostly measured for specific conditions regarding pulse duration, gate-source voltage, case temperature of the transistor etc., and as such do not provide information as to where the limits of the drain source voltages and currents for different measurement parameter values are. The goal of the thesis is to find a way to measure the limits of drain-source voltages and currents of power electronics transistors (in this case a SiC MOSFET transistor), and to see if a simple SPICE-model could be built for other power electronic transistors as well, based on the results of this thesis.
Keywords:SiC, MOSFET, transistor, simulation, PCB
Place of publishing:Maribor
Place of performance:Maribor
Publisher:[D. Molnar]
Year of publishing:2021
Number of pages:XVIII, 83 f.
PID:20.500.12556/DKUM-79121 New window
UDC:621.382.3(043.2)
COBISS.SI-ID:67799555 New window
Publication date in DKUM:02.06.2021
Views:1071
Downloads:71
Metadata:XML DC-XML DC-RDF
Categories:KTFMB - FERI
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Licences

License:CC BY-ND 4.0, Creative Commons Attribution-NoDerivatives 4.0 International
Link:http://creativecommons.org/licenses/by-nd/4.0/
Description:Under the NoDerivatives Creative Commons license one can take a work released under this license and re-distribute it, but it cannot be shared with others in adapted form, and credit must be provided to the author.
Licensing start date:09.05.2021

Secondary language

Language:Slovenian
Title:Merjenje in modeliranje močnostnih SiC MOSFET tranzistorjev
Abstract:Na področju močnostne elektronike je bilo v zadnjih tridesetih letih večje povpraševanje po hitrejših in močnejših MOSFET tranzistorjih. Ena izmed vrst MOSFET tranzistorjev, ki ustreza tem zahtevam, temelji na tehnologiji SiC ali silicijevem karbidu. SiC MOSFET tranzistorji imajo prihodnost v razvoju električnih vozil, procesih pretvorbe in prenosa energije in še veliko več. Primerni so za visoke napetosti in tokove pri visokih preklopnih frekvencah in tako ustvarjajo zelo majhne izgube. Merjenje preklopnih parametrov pomaga pri razvoju naprednejših vezi na osnovi SiC MOSFET tranzistorjev, zasnovanih za izvedbe velike moči in visoke hitrosti. Da bi ugotovili meje delovanja te vrste tranzistorjev med preklapljanjem, je potrebno narediti elektronsko vezje, ki lahko dovolj natančno merijo pomembne preklopne parametre. Obstoječe merilne nastavitve so zasnovane za merjenje izhodnih vrednosti SiC MOSFET tranzistorjev z uporabo zaporednih kratkih pulzov. Delo se osredotoča na merjenje teh vrednosti znotraj enega, čim hitrejšega pulza, in na merjenje meja teh vrednosti pri različnih temperaturah ohišja tranzistorja in različnih napetosti drain-source. Cilj magistrskega dela je ustvariti simulacijo na osnovi modela SiC MOSFET tranzistorja, analizirati obnašanje simulacije med preklopom z enim pulzom in nato na podlagi simulacije zgraditi evalvacijsko tiskano (elektronsko) vezje. Pomembno je analizirati vedenje elektronskega vezja, kako se ga primerja s simulacijskim modelom in kako natančni so rezultati simulacije v primerjavi z meritvami, izvedenimi na tiskanemu vezju. Na koncu bodo izmerjene meje tokov drain-source pri različnih temperaturah ohišja SiC MOSFET tranzistorja, pridobljene podatke pa bomo primerjali s simulacijo. Zaključek o tem, kako dobro je simulacija predstavljala elektronsko vezje in kako dobro so bile zastopane meritve v primerjavi s podatki proizvajalca, bo predstavljal oblikovan in izdelan simulacijski načrt, ki bo služil kot osnova za načrtovanje tiskanega vezja ki uporablja različne tranzistorje močnostne elektronike.
Keywords:SiC, MOSFET, tranzistor, simulacija, vezje


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